Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators

Fabrication of Sub-THz Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas

We fabricated sub-THz oscillators using resonant tunneling diodes integrated with slot antennas. Oscillations at 90GHz and 136GHz were obtained for the slot antennas with the lengths of 1mm and 800μm. Theoretical calculation shows that the maximum oscillation frequency up to ~1.2THz is expected in this structure with short antenna.

Resonant-tunneling diodes with emitter prewells

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

Quantitative simulation of a resonant tunneling diode

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

THz resonant-tunneling diodes

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...